Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET

Low substrate/lattice temperature (< 300="" k)="" operation="" of="" n-mosfet="" has="" been="" effectively="" studied="" by="" device="" research="" and="" integration="" professionals="" in="" cmos="" logic="" and="" analog="" products="" from="" the="" early="" 1970s.="" the="" author="" of="" this="" book="" previously="" composed="" an="" e-book="" in="" this="" area="" where="" he="" and="" his="" co-authors="" performed="" original="" simulation="" and="" modeling="" work="" on="" mosfet="" threshold="" voltage="" and="" demonstrated="" that="" through="" efficient="" manipulation="" of="" threshold="" voltage="" values="" at="" lower="" substrate="" temperatures,="" superior="" degrees="" of="" reduction="" of="" subthreshold="" and="" off-state="" leakage="" current="" can="" be="" implemented="" in="" high-density="" logic="" and="" microprocessor="" chips="" fabricated="" in="" a="" silicon="" die.="" in="" this="" book,="" the="" author="" explores="" other="" device="" parameters="" such="" as="" channel="" inversion="" carrier="" mobility="" and="" its="" characteristic="" evolution="" as="" temperature="" on="" the="" die="" varies="" from="" 100-300="" k.="" channel="" mobility="" affects="" both="" on-state="" drain="" current="" and="" subthreshold="" drain="" current="" and="" both="" drain="" current="" behaviors="" at="" lower="" temperatures="" have="" been="" modeled="" accurately="" and="" simulated="" for="" a="" 1="" m="" channel="" length="" n-mosfet.="" in="" addition,="" subthreshold="" slope="" which="" is="" an="" indicator="" of="" how="" speedily="" the="" device="" drain="" current="" can="" be="" switched="" between="" near="" off="" current="" and="" maximum="" drain="" current="" is="" an="" important="" device="" attribute="" to="" model="" at="" lower="" operating="" substrate="" temperatures.="" this="" book="" is="" the="" first="" to="" illustrate="" the="" fact="" that="" a="" single="" subthreshold="" slope="" value="" which="" is="" generally="" reported="" in="" textbook="" plots="" and="" research="" articles,="" is="" erroneous="" and="" at="" lower="" gate="" voltage="" below="" inversion,="" subthreshold="" slope="" value="" exhibits="" a="" variation="" tendency="" on="" applied="" gate="" voltage="" below="" threshold,="" i.e.,="" varying="" depletion="" layer="" and="" vertical="" field="" induced="" surface="" band="" bending="" variations="" at="" the="" mosfet="" channel="" surface.="" the="" author="" also="" will="" critically="" review="" the="" state-of-the="" art="" effectiveness="" of="" certain="" device="" architectures="" presently="" prevalent="" in="" the="" semiconductor="" industry="" below="" 45="" nm="" node="" from="" the="" perspectives="" of="" device="" physical="" analysis="" at="" lower="" substrate="" temperature="" operating="" conditions.="" the="" book="" concludes="" with="" an="" emphasis="" on="" modeling="" simulations,="" inviting="" the="" device="" professionals="" to="" meet="" the="" performance="" bottlenecks="" emanating="" from="" inceptives="" present="" at="" these="" lower="" temperatures="" of="" operation="" of="" today's="" 10="" nm="" device="">